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от 1 шт - 87.00 руб.
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| Код |
Производитель |
Тип |
Наличие |
Корпус |
| X3-5-3 |
BRAND |
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На заказ
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SO-8 |
Описание: P-Channel PowerTrench , MOSFET ,-30V, -8.8A, 20mFeatures- , Max rDS(on) = 20m at VGS = -10V, ID = -8.8A- , Max rDS(on) = 35m at VGS = -4.5V, ID = -6.7A- , Extended VGSS range (-25V) for battery applications- , HBM ESD protection level of ±,3.8KV typical (note 3)- , High performance trench technology for extremely low rDS(on)- , High power and current handling capability- , Termination is Lead-free and RoHS compliantGeneral DescriptionThis P-Channel MOSFET is produced using FairchildSemiconductor&rsquo,s advanced PowerTrench®, process that hasbeen especially tailored to minimize the on-state resistance.This device is well suited for Power Management and loadswitching applications common in Notebook Computers andPortable Battery Packs. ,
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